AP01N40J mosfet equivalent, n-channel enhancement mode power mosfet.
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drai.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-251 package is widel y preferred for commercial- industrial through-hole appl.
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